BFG198
DESCRIPTION
PINNING
NPN planar epitaxial transistor in a
DESCRIPTION plastic SOT223 envelope, intended for wideband amplifier applications.
1 emitter fpage
The device features a high gain and
2 base excellent output voltage capabilities. 3 emitter
4 collector
Product specification
Top view
MSB002
- 1
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
VCBO VCEO IC Ptot h FE f T
Vo collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain output voltage open emitter open base up to Ts = 135 C (note 1) IC = 50 m A; VCE = 5 V; Tj = 25 C IC = 50 m A; VCE = 8 V; f = 1 GHz; Tamb = 25 C IC = 50 m A; VCE = 8 V; f = 500 MHz; Tamb = 25 C IC = 50 m A; VCE = 8 V; f = 800 MHz; Tamb = 25 C dim =
- 60 d B; IC = 70 m A; VCE = 8 V; RL = 75 ; Tamb = 25 C; f(p+q- r) = 793.25 MHz
MIN.
- -
- - 40
- TYP.
- -
- - 90 8
MAX. 20 10 100 1
- -...
