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BFG198 - NPN 8GHz wideband transistor

General Description

for wideband amplifier applications.

Key Features

  • a high gain and 2 base excellent output voltage capabilities. 3 emitter 4 collector Product specification BFG198 4 1 2 3 Top view MSB002 - 1 Fig.1 SOT223. QUICK.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification 1995 Sep 12 NXP Semiconductors NPN 8 GHz wideband transistor DESCRIPTION PINNING NPN planar epitaxial transistor in a PIN DESCRIPTION plastic SOT223 envelope, intended for wideband amplifier applications. 1 emitter fpage The device features a high gain and 2 base excellent output voltage capabilities. 3 emitter 4 collector Product specification BFG198 4 1 2 3 Top view MSB002 - 1 Fig.1 SOT223.