Datasheet4U Logo Datasheet4U.com

BFG425W - NPN 25 GHz wideband transistor

General Description

emitter base emitter collector APPLICATIONS RF front end

Wideband applications, e.g.

Radar detectors Pagers Satellite television tuners (SATV)

High frequency oscillators.

Key Features

  • Very high power gain.
  • Low noise figure.
  • High transition frequency.
  • Emitter is thermal lead.
  • Low feedback capacitance.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BFG425W NPN Transistor INCHANGE
BFG424F NPN 25 GHz wideband transistor Philips
BFG135A NPN Silicon RF Transistor Siemens Semiconductor Group
BFG135A NPN Silicon RF Transistor Infineon Technologies AG
BFG193 NPN Transistor INCHANGE

Other Datasheets by NXP Semiconductors

Part Number Description
BFG403W NPN 17 GHz wideband transistor
BFG410W NPN 22 GHz wideband transistor
BFG480W NPN wideband transistor
BFG10 NPN 2 GHz RF power transistor
BFG10W UHF power transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DISCRETE SEMICONDUCTORS DATA SHEET BFG425W NPN 25 GHz wideband transistor Product specification Supersedes data of 1998 Mar 11 2010 Sep 15 NXP Semiconductors NPN 25 GHz wideband transistor Product specification BFG425W FEATURES  Very high power gain  Low noise figure  High transition frequency  Emitter is thermal lead  Low feedback capacitance. PINNING PIN 1 2 3 4 DESCRIPTION emitter base emitter collector APPLICATIONS  RF front end  Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.)  Radar detectors  Pagers  Satellite television tuners (SATV)  High frequency oscillators.