BFG590 Datasheet | NXP Semiconductors

FEATURES - High power gain - Low noise figure - High transition frequency - Gold metallization ensures excellent reliability. APPLICATIONS - MATV/CATV amplifiers and RF munications subscriber equipment in the GHz range - Ideally suitable for use in class-A, (A)B and C amplifiers with either pulsed or continuous drive. PINNING DESCRIPTION PIN BFG590 1 2 3 4 collector base emitter emitter BFG590/X collector emitter base emitter handbook, 2 columns 4 DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. MARKING TYPE NUMBER BFG590 BFG590/X CODE N38 N44 Fig.1 Simplified outline SOT143B. 1 Top view MSB014 QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot h FE Cre f T GUM |S21|2 PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain insertion power gain Ts ≤ 60 °C IC = 35 m A; VCE = 8 V IC = 0; VCE = 8 V; f = 1 MHz IC = 80 m A; VCE = 4 V; f = 1 GHz IC = 80 m A; VCE = 4 V; f = 900 MHz; Tamb = 25 °C IC = 80 m A; VCE = 4 V; f = 900 MHz; Tamb = 25 °C CONDITIONS open emitter open base - - - - 50 - - - - MIN. - - - - 90 0.7 5 13 11 TYP. MAX. 20 15 200 400 280 - - - - p F GHz d B d B UNIT V V m A m W 1998 Oct 02 Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER thermal resistance from junction to soldering point CONDITIONS Ts ≤ 60 °C; note 1 VALUE 290 UNIT K/W PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature Ts ≤ 60 °C;...