NXP Semiconductors BFG590
NPN 5 GHz wideband transistors
| Part No. | BFG590 |
|---|---|
| Datasheet | BFG590 Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN 5 GHz wideband transistors |
| Buy | Stock & Price |
FEATURES
● High power gain● Low noise figure
● High transition frequency
● Gold metallization ensures excellent reliability.
APPLICATIONS
● MATV/CATV amplifiers and RF communications subscriber equipment in the GHz range● Ideally suitable for use in class-A, (A)B and C amplifiers with either pulsed or continuous drive. PINNING
DESCRIPTION
PIN BFG590 1 2 3 4 collector base emitter emitter BFG590/X collector emitter base emitter handbook, 2 columns 4 3DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. MARKING TYPE NUMBER BFG590 BFG590/X CODE N38 N44 Fig.1 Simplified outline SOT143B. 1 Top view 2 MSB014 QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Cre fT GUM |S21|2 PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain insertion power gain Ts ≤ 60 °C IC = 35 mA; VCE = 8 V IC = 0; VCE = 8 V; f =...
