Datasheet4U Logo Datasheet4U.com

BFG590X - NPN 5 GHz wideband transistors

Download the BFG590X datasheet PDF. This datasheet also covers the BFG590 variant, as both devices belong to the same npn 5 ghz wideband transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package.

Key Features

  • High power gain.
  • Low noise figure.
  • High transition frequency.
  • Gold metallization ensures excellent reliability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BFG590_PhilipsSemiconductors.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
BFG590 NPN 5 GHz wideband transistors NXP
BFG590W NPN 5 GHz wideband transistors NXP
BFG591 NPN 7 GHz wideband transistor NXP
BFG505 NPN 9 GHz wideband transistors NXP
BFG505W NPN 9 GHz wideband transistors NXP

Other Datasheets by Philips Semiconductors (now NXP Semiconductors)

Part Number Description
BFG540X NPN 9 GHz wideband transistor
BFG540XR NPN 9 GHz wideband transistor
BFG424F NPN 25 GHz wideband transistor
BFG92A NPN 5 GHz wideband transistor
BFG92AX NPN 5 GHz wideband transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D071 BFG590; BFG590/X NPN 5 GHz wideband transistors Product specification Supersedes data of 1995 Sep 19 1998 Oct 02 Philips Semiconductors NPN 5 GHz wideband transistors Product specification BFG590; BFG590/X FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS • MATV/CATV amplifiers and RF communications subscriber equipment in the GHz range • Ideally suitable for use in class-A, (A)B and C amplifiers with either pulsed or continuous drive. DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package.