BFG590X Description
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. QUICK REFERENCE DATA SYMBOL PARAMETER VCBO VCEO IC Ptot hFE Cre fT GUM collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain |S21|2 insertion power gain CONDITIONS open emitter open base Ts ≤ 60 °C IC...
BFG590X Key Features
- High power gain
- Low noise figure
- High transition frequency
- Gold metallization ensures excellent reliability
BFG590X Applications
- MATV/CATV amplifiers and RF munications subscriber equipment in the GHz range
- Ideally suitable for use in class-A, (A)B and C amplifiers with either pulsed or continuous drive