BFG590X Datasheet | Philips Semiconductors

FEATURES - High power gain - Low noise figure - High transition frequency - Gold metallization ensures excellent reliability. APPLICATIONS - MATV/CATV amplifiers and RF munications subscriber equipment in the GHz range - Ideally suitable for use in class-A, (A)B and C amplifiers with either pulsed or continuous drive. DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. MARKING TYPE NUMBER BFG590 BFG590/X CODE N38 N44 PINNING 1 2 3 4 DESCRIPTION BFG590 BFG590/X collector base emitter emitter collector emitter base emitter handbook, 2 c4olumns 1 Top view MSB014 Fig.1 Simplified outline SOT143B. QUICK REFERENCE DATA SYMBOL PARAMETER VCBO VCEO IC Ptot h FE Cre f T GUM collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain |S21|2 insertion power gain CONDITIONS open emitter open base Ts ≤ 60 °C IC = 35 m A; VCE = 8 V IC = 0; VCE = 8 V; f = 1 MHz IC = 80 m A; VCE = 4 V; f = 1 GHz IC = 80 m A; VCE = 4 V; f = 900 MHz; Tamb = 25 °C IC = 80 m A; VCE = 4 V; f = 900 MHz; Tamb = 25 °C MIN. - - - - 50 - - - - TYP. - - - - 90 0.7 5...