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BFG590W - NPN 5 GHz wideband transistors

General Description

NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package.

PINNING PIN BFG590W 1 2 3 4 collector base emitter emitter MARKING TYPE NUMBER BFG590W BFG590W/X CODE T1 T2 Fig.1 SOT343N.

Key Features

  • High power gain.
  • Low noise figure.
  • High transition frequency.
  • Gold metallization ensures excellent reliability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET book, halfpage M3D123 BFG590W; BFG590W/X NPN 5 GHz wideband transistors Product specification Supersedes data of August 1995 1998 Oct 15 Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590W; BFG590W/X FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS • MATV/CATV amplifiers and RF communications subscriber equipment in the GHz range • Ideally suitable for use in class-A, (A)B and C amplifiers with either pulsed or continuous drive. DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. PINNING PIN BFG590W 1 2 3 4 collector base emitter emitter MARKING TYPE NUMBER BFG590W BFG590W/X CODE T1 T2 Fig.1 SOT343N.