BFG590W Description
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. Tamb = 25 °C open emitter collector-emitter voltage open base CONDITIONS MIN. Tamb = 25 °C − IC = 80 mA;.
BFG590W Key Features
- High power gain
- Low noise figure
- High transition frequency
- Gold metallization ensures excellent reliability
BFG590W Applications
- MATV/CATV amplifiers and RF munications subscriber equipment in the GHz range
- Ideally suitable for use in class-A, (A)B and C amplifiers with either pulsed or continuous drive