BFG590W Datasheet | NXP Semiconductors

FEATURES - High power gain - Low noise figure - High transition frequency - Gold metallization ensures excellent reliability. APPLICATIONS - MATV/CATV amplifiers and RF munications subscriber equipment in the GHz range - Ideally suitable for use in class-A, (A)B and C amplifiers with either pulsed or continuous drive. DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. PINNING PIN BFG590W 1 2 3 4 collector base emitter emitter MARKING TYPE NUMBER BFG590W BFG590W/X CODE T1 T2 Fig.1 SOT343N. DESCRIPTION 1 Top view 2 MBK523 page BFG590W/X 1 2 3 4 collector emitter base emitter QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot h FE Cre f T GUM |S21|2 PARAMETER collector-base voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain insertion power gain Ts ≤ 85 °C IC = 70 m A; VCE = 8 V IC = 0; VCB = 8 V; f = 1 MHz IC = 80 m A; VCE = 4 V; f = 1 GHz; Tamb = 25 °C open emitter collector-emitter voltage open base CONDITIONS MIN. - - - - 60 - - TYP. MAX. UNIT - - - - 90 0.7 5 13 11 20 15 200 500 250 - - - - p F GHz d B d B V V m A m W IC = 80 m A; VCE = 4 V; f = 900 MHz; Tamb = 25 °C - IC = 80 m A; VCE = 4 V; f = 900 MHz; Tamb = 25 °C - 1998 Oct 15 Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590W; BFG590W/X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER thermal resistance from junction to soldering point CONDITIONS Ts ≤ 85 °C; note 1 VALUE 180 UNIT K/W PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature Ts ≤ 85 °C; see...