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BFG94 - NPN 6 GHz wideband transistor

General Description

NPN transistor mounted in a plastic SOT223 envelope.

It is primarily intended for use in communication and instrumentation systems.

Fig.1 SOT223.

Key Features

  • High power gain.
  • Low noise figure.
  • Low intermodulation distortion.
  • Gold metallization ensures excellent reliability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BFG94 NPN 6 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 6 GHz wideband transistor FEATURES • High power gain • Low noise figure • Low intermodulation distortion • Gold metallization ensures excellent reliability. DESCRIPTION NPN transistor mounted in a plastic SOT223 envelope. It is primarily intended for use in communication and instrumentation systems. 1 Top view BFG94 PINNING PIN 1 2 3 4 base emitter collector DESCRIPTION emitter page 4 2 3 MSB002 - 1 Fig.1 SOT223.