BFG94
FEATURES
- High power gain
- Low noise figure
- Low intermodulation distortion
- Gold metallization ensures excellent reliability. DESCRIPTION
NPN transistor mounted in a plastic SOT223 envelope. It is primarily intended for use in munication and instrumentation systems.
Top view
PINNING PIN 1 2 3 4 base emitter collector DESCRIPTION emitter page
MSB002
- 1
Fig.1 SOT223.
QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot Cre f T GUM VO PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation feedback capacitance transition frequency maximum unilateral power gain output voltage up to Ts = 140 °C (note 1) IC = 0; VCE = 10 V; f = 1 MHz IC = 45 m A; VCE = 10 V; f = 1 GHz; Tamb = 25 °C IC = 45 m A; VCE = 10 V; f = 1 GHz; Tamb = 25 °C IC = 45 m A; VCE = 10 V; dim =
- 60 d B; RL = 75 Ω; f = 800 MHz; Tamb = 25 °C IC = 45 m A; VCE = 10 V; f = 1 GHz; Tamb = 25 °C open base CONDITIONS open emitter MIN. TYP. MAX. UNIT
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- 4 11.5
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