BFG97
DESCRIPTION
NPN planar epitaxial transistor mounted in a plastic SOT223 envelope. It features excellent output voltage capabilities, and is primarily intended for use in MATV applications. PNP plement is the BFG31.
Top view
PINNING PIN 1 2 3 4 DESCRIPTION emitter base emitter collector age
MSB002
- 1
Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot h FE f T GUM PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain up to Ts = 125 °C (note 1) IC = 70 m A; VCE = 10 V; Tj = 25 °C IC = 70 m A; VCE = 10 V; f = 500 MHz; Tamb = 25 °C IC = 70 m A; VCE = 10 V; f = 500 MHz; Tamb = 25 °C IC = 70 m A; VCE = 10 V; f = 800 MHz; Tamb = 25 °C Vo output voltage IC = 70 m A; VCE = 10 V; dim =
- 60 d B; RL = 75 Ω; f(p+q- r) = 793.25 MHz; Tamb = 25 °C open base CONDITIONS open emitter MIN.
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- - 25
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- - TYP.
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- - 80 5.5 16 12 700 MAX. 20 15 100 1
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- -
- GHz d...
