NXP Semiconductors BFG97
The circuit has been built on a double copper-clad printed circuit board with PTFE dielectric (εr = 2.2); thickness 1⁄16 inch; thickness of copper sheet 2 × 35 µm.| Part No. | BFG97 |
|---|---|
| Datasheet | BFG97 Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN 5 GHz wideband transistor |
| Buy | Stock & Price |
DESCRIPTION
NPN planar epitaxial transistor mounted in a plastic SOT223 envelope. It features excellent output voltage capabilities, and is primarily intended for use in MATV applications. PNP complement is the BFG31. 1 Top view BFG97 PINNING PIN 1 2 3 4DESCRIPTION
emitter base emitter collector age 4 2 3 MSB002 - 1 Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT GUM PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain up to Ts = 125 °C (note 1) IC = 70 mA; VCE = 10 V; Tj = 25 °C IC = 70 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 °C IC = 70 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 °C IC = 70 mA; VCE = 10 V; f = 800 MHz; Tamb = 25 °C Vo output voltage IC = 70 mA; VCE = 10 V; dim = −60 dB; RL = 75 Ω; f(p+q−r) = 793.25 MHz; Tamb = 25 °C open base CONDITIONS open emitter MIN. − − − − 25 − − − − TYP. − − − − 80 5.5 16 12 700 MAX. 20 15 100 1 − − − − − GHz dB dB mV UNIT V V mA W LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134).
