BFM505 Description
5 4 c1 b2 e1 e2 MAM210 c2 DESCRIPTION Dual transistor with two silicon NPN RF dies in a surface mount, 6-pin SOT363 (S-mini) package. The transistors are primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular phones, cordless phones, radar detectors, pagers and satellite TV-tuners. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN.
BFM505 Key Features
- Small size
- Temperature and hFE matched
- Low noise and high gain
- High gain at low current and low capacitance at low voltage
- Gold metallization ensures excellent reliability