FEATURES
● Optimum temperature profile and excellent reliability properties ensured by emitter-ballasting resistors and application of gold sandwich metallization. APPLICATIONS
● MATV and microwave amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc. QUICK REFERENCE DATA SYMBOL VCEO IC Ptot hFE fT GUM PARAMETER collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency Tc ≤ 145 °C IC = 120 mA; VCE = 18 V; Tamb = 25 °C IC = 120 mA; VCE = 18 V; f = 1 GHz; Tamb = 25 °C open base CONDITIONS MIN. − − − 55 − − − − TYP. − − − − 6.5 17 13.5 1.2 DESCRIPTION
NPN wideband transistor in a 4-lead dual-emitter SOT172A2 package with a ceramic cap. All leads are isolated from the mounting base. PINNING 2 fpage BFQ135 4 3 1 PIN 1 2, 4 3 DESCRIPTION
collector emitter base Top view MSA457 Fig.1 SOT172A2. MAX. 19 150 2.7 − − − − − UNIT V mA W GHz dB dB V maximum unilateral power gain IC = 120 mA ; VCE = 18 V; f...
NXP Semiconductors
