BFQ135
Overview
- Optimum temperature profile and excellent reliability properties ensured by emitter-ballasting resistors and application of gold sandwich metallization. APPLICATIONS
- MATV and microwave amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc. QUICK REFERENCE DATA SYMBOL VCEO IC Ptot hFE fT GUM PARAMETER collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency Tc ≤ 145 °C IC = 120 mA; VCE = 18 V; Tamb = 25 °C IC = 120 mA; VCE = 18 V; f = 1 GHz; Tamb = 25 °C open base CONDITIONS MIN. - - - 55 - - - - TYP. - - - - 6.5 17 13.5 1.2 DESCRIPTION NPN wideband transistor in a 4-lead dual-emitter SOT172A2 package with a ceramic cap. All leads are isolated from the mounting base. PINNING 2 fpage BFQ135 4 3 1
