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BFQ135 - NPN 6.5 GHz wideband transistor

General Description

NPN wideband transistor in a 4-lead dual-emitter SOT172A2 package with a ceramic cap.

All leads are isolated from the mounting base.

Fig.1 SOT172A2.

Key Features

  • Optimum temperature profile and excellent reliability properties ensured by emitter-ballasting resistors and.

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Full PDF Text Transcription (Reference)

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DISCRETE SEMICONDUCTORS DATA SHEET BFQ135 NPN 6.5 GHz wideband transistor Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1997 Nov 07 Philips Semiconductors Product specification NPN 6.5 GHz wideband transistor FEATURES • Optimum temperature profile and excellent reliability properties ensured by emitter-ballasting resistors and application of gold sandwich metallization. APPLICATIONS • MATV and microwave amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc.