BFQ135 Description
NPN wideband transistor in a 4-lead dual-emitter SOT172A2 package with a ceramic cap. All leads are isolated from the mounting base. 19 150 2.7 − − − − − UNIT V mA W GHz dB dB V maximum unilateral power gain IC = 120 mA.
BFQ135 Key Features
- Optimum temperature profile and excellent reliability properties ensured by emitter-ballasting resistors and application