NXP Semiconductors BFQ136
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.| Part No. | BFQ136 |
|---|---|
| Datasheet | BFQ136 Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN 4 GHz wideband transistor |
| Buy | Stock & Price |
DESCRIPTION
NPN transistor in a four-lead dual-emitter SOT122A envelope with a ceramic cap. All leads are isolated from the stud. Diffused emitter-ballasting resistors and the application of gold sandwich metallization ensure an optimum temperature profile and excellent reliability properties. It features extremely high output voltage capabilities. It is primarily intended for final stages in UHF amplifiers. PINNING PIN 1 2 3 4DESCRIPTION
collector emitter base emitter page BFQ136 4 1 3 2 Top view MBK187 Fig.1 SOT122A. QUICK REFERENCE DATA SYMBOL VCEO IC Ptot fT GUM Vo PARAMETER collector-emitter voltage DC collector current total power dissipation transition frequency maximum unilateral power gain output voltage up to Tc = 100 °C IC = 500 mA; VCE = 15 V; f = 500 MHz; Tj = 25 °C IC = 500 mA; VCE = 15 V; f = 800 MHz; Tamb = 25 °C Ic = 500 mA; VCE = 15 V; dim = −60 dB; RL = 75 Ω; f(p+q−r) = 793.25 MHz; Tamb = 25 °C WARNING Product and environmental safety - toxic materials This product contains beryllium oxide.
