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BFQ136 - NPN 4 GHz wideband transistor

General Description

NPN transistor in a four-lead dual-emitter SOT122A envelope with a ceramic cap.

All leads are isolated from the stud.

Diffused emitter-ballasting resistors and the application of gold sandwich metallization ensure an optimum temperature profile and excellent reliability properties.

Key Features

  • extremely high output voltage capabilities. It is primarily intended for final stages in UHF amplifiers.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BFQ136 NPN 4 GHz wideband transistor Product speciļ¬cation File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product speciļ¬cation NPN 4 GHz wideband transistor DESCRIPTION NPN transistor in a four-lead dual-emitter SOT122A envelope with a ceramic cap. All leads are isolated from the stud. Diffused emitter-ballasting resistors and the application of gold sandwich metallization ensure an optimum temperature profile and excellent reliability properties. It features extremely high output voltage capabilities. It is primarily intended for final stages in UHF amplifiers. PINNING PIN 1 2 3 4 DESCRIPTION collector emitter base emitter page BFQ136 4 1 3 2 Top view MBK187 Fig.1 SOT122A.