NXP Semiconductors BFQ221
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.APPLICATIONS
● Primarily intended for buffer stages in high resolution colour monitors.DESCRIPTION
NPN silicon transistor encapsulated in a 3-lead plastic SOT54 package. PINNING PIN 1 2 3 base collector emitterDESCRIPTION
1 2 3 BFQ221 MSB033 Fig.1 Simplified outline SOT54. QUICK REFERENCE DATA SYMBOL VCBO IC Ptot fT Cre Tj PARAMETER collector-base voltage collector current (DC) total power dissipation transition frequency feedback capacitance junction temperature up to Ts = 60 °C IC = 25 mA; VCE = 10 V IC = 0; VCB = 10 V CONDITIONS open emitter − − − 1 1.7 − TYP MAX 100 100 1.15 − − 150 V mA W GHz pF °C UNIT LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCER VEBO IC IC(AV) Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipation storage temperature junction...