BFQ222 Description
NPN silicon transistor encapsulated in a 3-lead plastic SOT32 package. QUICK REFERENCE DATA SYMBOL VCBO IC Ptot fT Cre Tj PARAMETER collector-base voltage collector current (DC) total power dissipation transition frequency feedback capacitance junction temperature Tmb = 25 °C IC = 25 mA; VCB = 10 V CONDITIONS open emitter − − − 1 1.7 − TYP.