NXP Semiconductors BFQ245
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.| Part No. | BFQ245 |
|---|---|
| Datasheet | BFQ245 Download |
| Manufacturer |  NXP Semiconductors |
| Description | PNP video transistor |
| Buy | Stock & Price |
APPLICATIONS
● Primarily intended for cascode output and buffer stages in high resolution colour monitors.DESCRIPTION
PNP silicon transistor encapsulated in a 3-lead plastic SOT128B package. PINNING PIN 1 2 3DESCRIPTION
emitter collector base Fig.1 Simplified outline SOT128B. 1 2 3 MGA323 BFQ245 handbook, halfpage QUICK REFERENCE DATA SYMBOL VCBO IC Ptot fT Cre Tj PARAMETER collector-base voltage collector current (DC) total power dissipation transition frequency feedback capacitance junction temperature Tmb = 25 °C IC = −25 mA; VCE = −10 V IC = 0; VCB = −10 V CONDITIONS open emitter − − − 1 1.7 − TYP. MAX. −100 −100 3.75 − − 175 V mA W GHz pF °C UNIT LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCER VEBO IC IC(AV) Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipation storage temperature junction temperature CONDITIONS open emitter RBE = 100 Ω open collector see Fig.2 see Fig.2 Tmb = 25 °C; see Fig.3 − − − − − − −65 − MIN.
