NXP Semiconductors BFQ246
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.APPLICATIONS
● Primarily intended for cascode output and buffer stages in high resolution colour monitors.DESCRIPTION
PNP silicon transistor encapsulated in a 4-lead plastic SOT223 package. PINNING PIN 1 2 3 4 base emitter collector Fig.1 Simplified outline SOT223.DESCRIPTION
emitter BFQ246 handbook, halfpage 4 1 Top view 2 3 MSB002 - 1 QUICK REFERENCE DATA SYMBOL VCBO IC Ptot fT Cre Tj PARAMETER collector-base voltage collector current (DC) total power dissipation transition frequency feedback capacitance junction temperature up to Ts = 60 °C IC = −25 mA; VCE = −10 V IC = 0; VCB = −10 V CONDITIONS open emitter − − − 1 1.7 − TYP. MAX. −100 −100 3 − − 175 V mA W GHz pF °C UNIT LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCER VEBO IC IC(AV) Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average c...