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BFS19 - NPN medium frequency transistor

General Description

NPN medium frequency transistor in a SOT23 plastic package.

MARKING TYPE NUMBER BFS19 Note 1.

∗ = p : Made in Hong Kong.

Key Features

  • Low current (max. 30 mA).
  • Low voltage (max. 20 V).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BFS19 NPN medium frequency transistor Product specification Supersedes data of 1997 Jul 02 1999 Apr 15 Philips Semiconductors Product specification NPN medium frequency transistor FEATURES • Low current (max. 30 mA) • Low voltage (max. 20 V). APPLICATIONS • Medium frequency applications in thick and thin-film circuits. DESCRIPTION NPN medium frequency transistor in a SOT23 plastic package. 1 BFS19 PINNING PIN 1 2 3 base emitter collector DESCRIPTION handbook, halfpage 3 3 MARKING TYPE NUMBER BFS19 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. Fig.1 MARKING CODE(1) F2∗ Top view 1 2 MAM255 2 Simplified outline (SOT23) and symbol.