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BFS20W - NPN medium frequency transistor

General Description

NPN medium frequency transistor in a SOT323 (SC-70) plastic package.

TYPE NUMBER BFS20W Note 1.

∗ = -: Made in Hong Kong.

Key Features

  • Low current (max. 25 mA).
  • Low voltage (max. 20 V).
  • Very low feedback capacitance (typ. 350 fF).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BFS20W NPN medium frequency transistor Product specification 1999 Apr 21 Philips Semiconductors Product specification NPN medium frequency transistor FEATURES • Low current (max. 25 mA) • Low voltage (max. 20 V). • Very low feedback capacitance (typ. 350 fF). APPLICATIONS • IF and VHF applications in thick and thin-film circuits. handbook, halfpage BFS20W PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 DESCRIPTION 3 NPN medium frequency transistor in a SOT323 (SC-70) plastic package. MARKING 1 2 1 2 TYPE NUMBER BFS20W Note 1. ∗ = -: Made in Hong Kong. ∗ = t: Made in Malaysia. MARKING CODE(1) N1∗ Fig.1 Top view MAM062 Simplified outline (SOT323; SC-70) and symbol.