NXP Semiconductors BFS20W
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.FEATURES
● Low current (max. 25 mA)● Low voltage (max. 20 V).
● Very low feedback capacitance (typ. 350 fF).
APPLICATIONS
● IF and VHF applications in thick and thin-film circuits. handbook, halfpage BFS20W PINNING PIN 1 2 3 base emitter collectorDESCRIPTION
3DESCRIPTION
3 NPN medium frequency transistor in a SOT323 (SC-70) plastic package. MARKING 1 2 1 2 TYPE NUMBER BFS20W Note 1. ∗ = -: Made in Hong Kong. ∗ = t: Made in Malaysia. MARKING CODE(1) N1∗ Fig.1 Top view MAM062 Simplified outline (SOT323; SC-70) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Refer to SOT323 (SC-70) standard mounting conditions. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN.