NXP Semiconductors BFS20
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.FEATURES
● Low current (max. 25 mA)● Low voltage (max. 20 V)
● Very low feedback capacitance (typ. 350 fF).
APPLICATIONS
● IF and VHF applications in thick and thin-film circuits. handbook, halfpage BFS20 PINNING PIN 1 2 3 base emitter collectorDESCRIPTION
3 3 1 2DESCRIPTION
NPN medium frequency transistor in a SOT23 plastic package. MARKING TYPE NUMBER BFS20 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − −65 − −65 MIN. MAX. 30 20 4 25 25 250 +150 150 +150 MARKING CODE(1) G1∗ Top view 1 2 MAM255 Fig.1 Simplified outline (SOT23) and symbol.