Datasheet Summary
Elektronische Bauelemente
NPN Silicon Plastic-Encapsulate Transistor
A suffix of "-C" specifies halogen & lead-free
Features
High Fequency Application. VHF Band Amplifier application RoHS pliant Product Power dissipation
PCM : 0.25 W
Collector Current ICM : 25mA
Collector-base voltage V(BR)CBO : 30 V
Operating & storage junction temperature Tj, Tstg :
- 55OC ~ + 150O C
1 2
Top View
Collector 3
1 Base
2 Emitter
SOT-23 Dim Min Max
A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm
ELECTRICAL CHARACTERISTICS (Tamb=25℃...
