FEATURES
High Fequency Application. VHF Band Amplifier application RoHS Compliant Product Power dissipation PCM : 0.25 W Collector Current ICM : 25mA Collector-base voltage V(BR)CBO : 30 V Operating & storage junction temperature Tj, Tstg : - 55OC ~ + 150O C 1 2 3 A L 3 Top View 12 VG Collector 3 1 Base 2 Emitter BS C D H K J SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm ELECTRICAL CHARACTERISTICS
(Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Collector cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE(on) fT Test conditions Ic= 100µA, IE=0 Ic= 100µA, IB=0 IE=100µA,...
SeCoS Halbleitertechnologie GmbH