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BFS20 - NPN Silicon Plastic-Encapsulate Transistor

Key Features

  • High Fequency.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente BFS20 NPN Silicon Plastic-Encapsulate Transistor A suffix of "-C" specifies halogen & lead-free FEATURES High Fequency Application. VHF Band Amplifier application RoHS Compliant Product Power dissipation PCM : 0.25 W Collector Current ICM : 25mA Collector-base voltage V(BR)CBO : 30 V Operating & storage junction temperature Tj, Tstg : - 55OC ~ + 150O C 1 2 3 A L 3 Top View 12 VG Collector 3 1 Base 2 Emitter BS C D H K J SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.