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BFS20
NPN Silicon Epitaxial Planar Transistor
High frequency transistor for IF and VHF applications
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC Parameter
DC Current Gain at VCE = 10 V, IC = 7 mA Collector Cutoff Current at VCB = 20 V Emitter Cutoff Current at VEB = 4 V Base Emitter Voltage at VCE = 10 V, IC = 7 mA Transition Frequency at VCE = 10 V, IC = 5 mA, f = 100 MHz Collector Base Capacitance at VCB = 10 V, f = 1 MHz
SOT-23 Plastic Package
Symbol
VCBO VCEO VEBO
IC Ptot Tj TS
Value 30 20 4 25 200 150
- 65 to + 150
Unit V V V mA
mW OC OC
Symbol hFE
Min.
BFS20 Datasheet
