NXP Semiconductors BFS25A
NPN 5 GHz wideband transistor
| Part No. | BFS25A |
|---|---|
| Datasheet | BFS25A Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN 5 GHz wideband transistor |
| Buy | Stock & Price |
FEATURES
● Low current consumption● Low noise figure
● Gold metallization ensures excellent reliability
● SOT323 envelope. PINNING PIN
DESCRIPTION
Code: N6 1 base 2 emitter 3 collectorDESCRIPTION
NPN transistor in a plastic SOT323 envelope. It is designed for use in RF amplifiers and oscillators in pagers and pocket phones with signal frequencies up to 2 GHz. handbook, 2 columns 3 1 Top view 2 MBC870 Fig.1 SOT323. QUICK REFERENCE DATA SYMBOL PARAMETER VCBO VCEO IC Ptot hFE fT collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency GUM maximum unilateral power gain F noise figure CONDITIONS open emitter open base up to Ts = 170 C; note 1 IC = 0.5 mA; VCE = 1 V; Tj = 25 C IC = 1 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 C Ic = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 C Ic = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 C MIN. 50 3.5 TYP. 80 5 13 1.8 MAX. 8 5 6.5 32 200 UNIT V V mA mW GHz dB dB LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134).
