NXP Semiconductors BFS25
NPN 5 GHz wideband transistor
| Part No. | BFS25 |
|---|---|
| Datasheet | BFS25 Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN 5 GHz wideband transistor |
| Buy | Stock & Price |
FEATURES
● Low current consumption● Low noise figure
● Gold metallization ensures excellent reliability
● SOT323 envelope.
DESCRIPTION
NPN transistor in a plastic SOT323 envelope. It is designed for use in RF amplifiers and oscillators in pagers and pocket phones with signal frequencies up to 2 GHz. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT GUM F PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain noise figure up to Ts = 170 °C; note 1 IC = 0.5 mA; VCE = 1 V; Tj = 25 °C IC = 1 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 °C Ic = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 °C Ic = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 °C open base CONDITIONS open emitter MIN. − − − − 50 3.5 − − TYP. − − − − 80 5 13 1.8 1 Top view BFS25A PINNING PIN 1 2 3DESCRIPTION
Code: N6 base emitter collector handbook, 2 columns 3 2 MBC870 Fig.1 SOT323. MAX. 8 5 6.5 32 200 − − − UNIT V V mA mW GHz dB dB LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134).
