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BFT25 - NPN 2 GHz wideband transistor

Datasheet Summary

Description

NPN transistor in a plastic SOT23 envelope.

It is primarily intended for use in RF low power amplifiers, such as in pocket phones, paging systems, etc.

Features

  • low current consumption (100 µA to 1 mA); due to its high transition frequency, it also has excellent wideband properties and low noise up to high frequencies.

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Datasheet preview – BFT25

Datasheet Details

Part number BFT25
Manufacturer NXP
File Size 60.99 KB
Description NPN 2 GHz wideband transistor
Datasheet download datasheet BFT25 Datasheet
Additional preview pages of the BFT25 datasheet.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BFT25 NPN 2 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 November 1992 Philips Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION NPN transistor in a plastic SOT23 envelope. It is primarily intended for use in RF low power amplifiers, such as in pocket phones, paging systems, etc. The transistor features low current consumption (100 µA to 1 mA); due to its high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. PINNING PIN 1 2 3 base emitter collector 1 Top view BFT25 DESCRIPTION Code: V1p fpage 3 2 MSB003 Fig.1 SOT23.
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