DESCRIPTION
NPN transistor in a plastic SOT23 envelope. It is primarily intended for use in RF low power amplifiers, such as in pocket phones, paging systems, etc. PINNING PIN 1 2 3 base emitter collector 1 Top view BFT25 DESCRIPTION
Code: V1p fpage 3 2 MSB003 Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL VCBO VCEO Ic Ptot fT Cre GUM F PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation transition frequency feedback capacitance up to Ts = 167 °C; note 1 IC = 1 mA; VCE = 1 V; f = 500 MHz; Tamb = 25 °C IC = 1 mA; VCE = 1 V; f = 1 MHz; Tamb = 25 °C open base CONDITIONS open emitter − − − − 2.3 − 18 3.8 TYP. MAX. 8 5 6.5 30 − 0.45 − − UNIT V V mA mW GHz pF dB dB maximum unilateral power gain IC = 1 mA; VCE = 1 V; f = 500 MHz; Tamb = 25 °C noise figure IC = 1 mA; VCE = 1 V; f = 500 MHz; Tamb = 25 °C LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector tab.
NXP Semiconductors
