BFT25
DESCRIPTION
NPN transistor in a plastic SOT23 envelope. It is primarily intended for use in RF low power amplifiers, such as in pocket phones, paging systems, etc. The transistor features low current consumption (100 µA to 1 m A); due to its high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. PINNING PIN 1 2 3 base emitter collector
1 Top view
DESCRIPTION
Code: V1p fpage
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA SYMBOL VCBO VCEO Ic Ptot f T Cre GUM F PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation transition frequency feedback capacitance up to Ts = 167 °C; note 1 IC = 1 m A; VCE = 1 V; f = 500 MHz; Tamb = 25 °C IC = 1 m A; VCE = 1 V; f = 1 MHz; Tamb = 25 °C open base CONDITIONS open emitter
- -
- - 2.3
- 18 3.8 TYP. MAX. 8 5 6.5 30
- 0.45
- - UNIT V V m A m W GHz p F d B d B maximum unilateral power gain IC = 1 m A; VCE = 1 V; f = 500 MHz; Tamb = 25 °C noise figure IC =...
