Datasheet4U Logo Datasheet4U.com

BFT25 - NPN 2 GHz wideband transistor

General Description

NPN transistor in a plastic SOT23 envelope.

It is primarily intended for use in RF low power amplifiers, such as in pocket phones, paging systems, etc.

Key Features

  • low current consumption (100 µA to 1 mA); due to its high transition frequency, it also has excellent wideband properties and low noise up to high frequencies.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BFT29 SILICON EPITAXIAL NPN TRANSISTOR TT
BFT12 NPN SILICON RF BROADBAND TRANSISTOR Siemens Semiconductor Group
BFT30 SILICON EPITAXIAL NPN TRANSISTOR TT
BFT31 SILICON EPITAXIAL NPN TRANSISTOR TT
BFT33A NPN SILICON TRANSISTOR Seme LAB

Other Datasheets by NXP Semiconductors

Part Number Description
BFT25A NPN 5GHz wideband transistor
BFT45 PNP high-voltage transistor
BFT46 N-channel silicon FET
BFT92 PNP 5GHz wideband transistor
BFT92W PNP 4GHz wideband transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DISCRETE SEMICONDUCTORS DATA SHEET BFT25 NPN 2 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 November 1992 Philips Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION NPN transistor in a plastic SOT23 envelope. It is primarily intended for use in RF low power amplifiers, such as in pocket phones, paging systems, etc. The transistor features low current consumption (100 µA to 1 mA); due to its high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. PINNING PIN 1 2 3 base emitter collector 1 Top view BFT25 DESCRIPTION Code: V1p fpage 3 2 MSB003 Fig.1 SOT23.