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BFT25A - NPN 5GHz wideband transistor

General Description

The BFT25A is a silicon NPN transistor, primarily intended for use in RF low power amplifiers, such as pocket telephones and paging systems with signal frequencies up to 2 GHz.

The transistor is encapsulated in a 3-pin plastic SOT23 envelope.

Key Features

  • Low current consumption (100 A to 1 mA).
  • Low noise figure.
  • Gold metallization ensures excellent reliability. 1.3 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCBO collector-base voltage open emitter - - 8V VCEO collector-emitter open base voltage - - 5V IC DC collector current - - 6.5 mA Ptot total power up to Ts = 165 C [1] - - 32 mW dissipation hFE DC current gain IC = 0.5 mA; VCE = 1 V 50 80 200 fT tr.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SOT23 BFT25A NPN 5 GHz wideband transistor Rev. 5 — 12 September 2011 Product data sheet 1. Product profile 1.1 General description The BFT25A is a silicon NPN transistor, primarily intended for use in RF low power amplifiers, such as pocket telephones and paging systems with signal frequencies up to 2 GHz. The transistor is encapsulated in a 3-pin plastic SOT23 envelope. 1.2 Features and benefits  Low current consumption (100 A to 1 mA)  Low noise figure  Gold metallization ensures excellent reliability. 1.3 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCBO collector-base voltage open emitter - - 8V VCEO collector-emitter open base voltage - - 5V IC DC collector current - - 6.