BFT25A
description
The BFT25A is a silicon NPN transistor, primarily intended for use in RF low power amplifiers, such as pocket telephones and paging systems with signal frequencies up to 2 GHz.
The transistor is encapsulated in a 3-pin plastic SOT23 envelope.
1.2 Features and benefits
- Low current consumption (100 A to 1 m A)
- Low noise figure
- Gold metallization ensures excellent reliability.
1.3 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VCBO collector-base voltage open emitter
- - 8V
VCEO collector-emitter open base voltage
- - 5V
IC DC collector current
- - 6.5 m A
Ptot total power up to Ts = 165 C
[1]
- - 32 m W dissipation h FE
DC current gain IC = 0.5 m A; VCE = 1 V
50 80 200 f T transition
IC = 1 m A; VCE = 1 V;
3.5 5
- GHz frequency
Tamb = 25 C; f = 500 MHz
GUM maximum unilateral power gain
IC = 0.5 m A; VCE = 1 V; Tamb = 25 C; f = 1 GHz
- 15
- d B
F noise figure
= opt; IC = 0.5 m A;
-...
