NXP Semiconductors BFT25A
The BFT25A is a silicon NPN transistor, primarily intended for use in RF low power amplifiers, such as pocket telephones and paging systems with signal frequencies up to 2 GHz. The transistor is encapsulated in a 3-pin plastic SOT23 envelope.| Part No. | BFT25A |
|---|---|
| Datasheet | BFT25A Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN 5GHz wideband transistor |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Low current consumption (100 A to 1 mA)● Low noise figure
● Gold metallization ensures excellent reliability. 1.3 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCBO collector-base voltage open emitter - - 8V VCEO collector-emitter open base voltage - - 5V IC DC collector current - - 6.5 mA Ptot total power up to Ts = 165 C [1] - - 32 mW dissipation hFE DC current gain IC = 0.5 mA; VCE = 1 V 50 80 200 fT transition IC = 1 mA; VCE = 1 V; 3.5 5 - GHz frequency Tamb = 25 C; f = 500 MHz GUM maximum unilateral power gain IC = 0.5 mA; VCE = 1 V; Tamb = 25 C; f = 1 GHz - 15 - dB F noise figure = opt; IC = 0.5 mA; - 1.8 - dB VCE = 1 V; Tamb = 25 C; f = 1 GHz = opt; IC = 1 mA; VCE = 1 V; Tamb = 25 C; f = 1 GHz - 2- dB [1] Ts is the temperature at the soldering point of the collector tab. NXP Semiconductors 2. Pinning information Table 2. Discrete pinning Pin
DESCRIPTION
Code: V10 1 base 2 emitter 3 collector BFT25A NPN 5 GHz wideband transistor Simplified outline Symbol 33 12 1 2 sym021 3.
