NXP Semiconductors BFT93W
The handbook, 2 columns 3 BFT93W uses the same crystal as the SOT23 version, BFT93.FEATURES
● High power gain● Gold metallization ensures excellent reliability
● SOT323 (S-mini) package.
APPLICATIONS
It is intended as a general purpose transistor for wideband applications up to 2 GHz.DESCRIPTION
Silicon PNP transistor in a plastic, SOT323 (S-mini) package. PINNING PIN 1 2 3DESCRIPTION
base emitter collector 1 Top view 2 MBC870 BFT93W Marking code: X1. Fig.1 SOT323. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS VCBO VCEO IC Ptot hFE Cre fT GUM F Tj collector-base voltage open emitter collector-emitter voltage open base collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency up to Ts = 93 C; note 1 IC = 30 mA; VCE = 5 V IC = 0; VCE = 5 V; f = 1 MHz IC = 30 mA; VCE = 5 V; f = 500 MHz maximum unilateral power gain IC = 30 mA; VCE = 5 V; f = 500 MHz; Tamb = 25 C noise figure IC = 10 mA; VCE = 5 V; f = 500 MHz junction temperature Note 1. Ts is the temperature at the soldering point of the collector pin. MIN...