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BFU550 - NPN wideband silicon RF transistor

Description

NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dualemitter SOT143B package.

The BFU550 is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.

Features

  • Low noise, high breakdown RF transistor.
  • AEC-Q101 qualified.
  • Minimum noise figure (NFmin) = 0.7 dB at 900 MHz.
  • Maximum stable gain 21 dB at 900 MHz.
  • 11 GHz fT silicon technology 1.3.

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Datasheet preview – BFU550

Datasheet Details

Part number BFU550
Manufacturer NXP Semiconductors
File Size 283.75 KB
Description NPN wideband silicon RF transistor
Datasheet download datasheet BFU550 Datasheet
Additional preview pages of the BFU550 datasheet.

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Full PDF Text Transcription

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SOT143B BFU550 NPN wideband silicon RF transistor Rev. 2.1 — 17 April 2019 Product data sheet 1 Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dualemitter SOT143B package. The BFU550 is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. 1.2 Features and benefits • Low noise, high breakdown RF transistor • AEC-Q101 qualified • Minimum noise figure (NFmin) = 0.7 dB at 900 MHz • Maximum stable gain 21 dB at 900 MHz • 11 GHz fT silicon technology 1.3 Applications • Applications requiring high supply voltages and high breakdown voltages • Broadband amplifiers up to 2 GHz • Low noise amplifiers for ISM applications • ISM band oscillators 1.
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