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BFU550XR - NPN wideband silicon RF transistor

Description

NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dualemitter SOT143R package.

The BFU550XR is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.

Features

  • Low noise, high breakdown RF transistor.
  • AEC-Q101 qualified.
  • Minimum noise figure (NFmin) = 0.7 dB at 900 MHz.
  • Maximum stable gain 21.5 dB at 900 MHz.
  • 11 GHz fT silicon technology 1.3.

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Datasheet Details

Part number BFU550XR
Manufacturer NXP Semiconductors
File Size 290.10 KB
Description NPN wideband silicon RF transistor
Datasheet download datasheet BFU550XR Datasheet
Additional preview pages of the BFU550XR datasheet.

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Full PDF Text Transcription

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BFU550XR NPN wideband silicon RF transistor Rev. 2 — 12 April 2019 Product data sheet 1 Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dualemitter SOT143R package. The BFU550XR is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. 1.2 Features and benefits • Low noise, high breakdown RF transistor • AEC-Q101 qualified • Minimum noise figure (NFmin) = 0.7 dB at 900 MHz • Maximum stable gain 21.5 dB at 900 MHz • 11 GHz fT silicon technology 1.3 Applications • Applications requiring high supply voltages and high breakdown voltages • Broadband amplifiers up to 2 GHz • Low noise amplifiers for ISM applications • ISM band oscillators 1.
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