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BFU590G - NPN wideband silicon RF transistor

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NXP

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BFU590G NPN wideband silicon RF transistor by NXP - Datasheet Preview — Datasheet preview – BFU590G

Datasheet Details

Part number	BFU590G
Manufacturer	NXP
File Size	218.07 KB
Description	NPN wideband silicon RF transistor
Datasheet	BFU590G Datasheet
Additional preview pages of the BFU590G datasheet.

Product details

Description

NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package.

The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.

Features

Medium power, high linearity, high breakdown voltage RF transistor.
AEC-Q101 qualified.
Maximum stable gain 13 dB at 900 MHz.
PL(1dB) 21.5 dBm at 900 MHz.
8.5 GHz fT silicon technology 1.3.

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Published: Mar 23, 2016 |