BFU590G Overview
NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.
BFU590G Key Features
- Medium power, high linearity, high breakdown voltage RF transistor
- AEC-Q101 qualified
- Maximum stable gain 13 dB at 900 MHz
- PL(1dB) 21.5 dBm at 900 MHz
- 8.5 GHz fT silicon technology
