BFU610F Overview
BFU610F NPN wideband silicon RF transistor Rev. 2 — 11 January 2011 Product data sheet 1. Product profile CAUTION 1.1 General NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5,...
BFU610F Key Features
- Low noise high gain microwave transistor
- Noise figure (NF) = 1.7 dB at 5.8 GHz
- High associated gain 13.5 dB at 5.8 GHz
- 40 GHz fT silicon technology