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BFU610F

Manufacturer: NXP Semiconductors

BFU610F datasheet by NXP Semiconductors.

BFU610F datasheet preview

BFU610F Datasheet Details

Part number BFU610F
Datasheet BFU610F_PhilipsSemiconductors.pdf
File Size 126.30 KB
Manufacturer NXP Semiconductors
Description NPN Wideband Silicon Germanium RF Transistor
BFU610F page 2 BFU610F page 3

BFU610F Overview

NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices.

BFU610F Key Features

  • Low noise high gain microwave transistor
  • Noise figure (NF) = 1.7 dB at 5.8 GHz
  • High associated gain 13.5 dB at 5.8 GHz
  • 40 GHz fT silicon technology
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