BFU610F Description
NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices.
BFU610F Key Features
- Low noise high gain microwave transistor
- Noise figure (NF) = 1.7 dB at 5.8 GHz
- High associated gain 13.5 dB at 5.8 GHz
- 40 GHz fT silicon technology