BFX30
FEATURES
- High current (max.600 m A)
- Low voltage (max. 65 V). APPLICATIONS
- Switching applications. DESCRIPTION
PNP transistor in a TO-39 metal package. PINNING PIN 1 2 3 emitter base
DESCRIPTION collector, connected to case
1 handbook, halfpage 2 2 3
MAM334
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot h FE f T toff PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency turn-off time Tamb ≤ 25 °C IC =
- 10 m A; VCE =
- 400 m V IC =
- 50 m A; VCE =
- 10 V; f = 100 MHz ICon =
- 150 m A; IBon =
- 15 m A; IBoff = 10 m A open emitter open base CONDITIONS MIN.
- -
- - 50 100
- TYP.
- -
- - 90
- - MAX.
- 65
- 65
- 600 600 200
- 300 MHz ns UNIT V V m A m W
1997 Apr 16
Philips Semiconductors
Product specification
PNP switching transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM...
