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BGU7003 - Wideband Silicon Germanium Low-noise Amplifier MMIC

General Description

The BGU7003 MMIC is a wideband amplifier in SiGe:C technology for high speed, low-noise applications in a plastic, leadless 6 pin, extremely thin small outline SOT891 package.

This device is sensitive to ElectroStatic Discharge (ESD).

Therefore care should be taken during transport and handling.

Key Features

  • Low noise high gain microwave MMIC.
  • Applicable between 40 MHz and 6 GHz.
  • Integrated temperature stabilized bias for easy design.
  • Bias current configurable with external resistor.
  • Noise figure NF = 0.80 dB at 1.575 GHz.
  • Insertion power gain = 18.3 dB at 1.575 GHz.
  • 110 GHz transit frequency - SiGe:C technology.
  • Power-down mode current consumption < 1 μA.
  • Optimized performance at low 5 mA supply current.
  • ESD.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BGU7003 Wideband silicon germanium low-noise amplifier MMIC Rev. 02 — 22 June 2010 Product data sheet 1. Product profile CAUTION 1.1 General description The BGU7003 MMIC is a wideband amplifier in SiGe:C technology for high speed, low-noise applications in a plastic, leadless 6 pin, extremely thin small outline SOT891 package. This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features „ Low noise high gain microwave MMIC „ Applicable between 40 MHz and 6 GHz „ Integrated temperature stabilized bias for easy design „ Bias current configurable with external resistor „ Noise figure NF = 0.80 dB at 1.575 GHz „ Insertion power gain = 18.3 dB at 1.