BGU7003 - Wideband Silicon Germanium Low-noise Amplifier MMIC

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NXP

BGU7003 Wideband Silicon Germanium Low-noise Amplifier MMIC by NXP - Datasheet Preview — Datasheet preview – BGU7003

Datasheet Details

Part number	BGU7003
Manufacturer	NXP
File Size	229.54 KB
Description	Wideband Silicon Germanium Low-noise Amplifier MMIC
Datasheet	BGU7003 Datasheet
Additional preview pages of the BGU7003 datasheet.

Product details

Description

The BGU7003 MMIC is a wideband amplifier in SiGe:C technology for high speed, low-noise applications in a plastic, leadless 6 pin, extremely thin small outline SOT891 package.

Features

Low noise high gain microwave MMIC.
Applicable between 40 MHz and 6 GHz.
Integrated temperature stabilized bias for easy design.
Bias current configurable with external resistor.
Noise figure NF = 0.80 dB at 1.575 GHz.
Insertion power gain = 18.3 dB at 1.575 GHz.
110 GHz transit frequency - SiGe:C technology.
Power-down mode current consumption < 1 μA.
Optimized performance at low 5 mA supply current.
ESD.

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Published: Jul 13, 2009 |