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BGU7003 Datasheet Wideband Silicon Germanium Low-noise Amplifier Mmic

Manufacturer: NXP Semiconductors

Overview: BGU7003 Wideband silicon germanium low-noise amplifier MMIC Rev. 02 — 22 June 2010 Product data sheet 1. Product profile CAUTION 1.

General Description

The BGU7003 MMIC is a wideband amplifier in SiGe:C technology for high speed, low-noise applications in a plastic, leadless 6 pin, extremely thin small outline SOT891 package.

This device is sensitive to ElectroStatic Discharge (ESD).

Therefore care should be taken during transport and handling.

Key Features

  • Low noise high gain microwave MMIC.
  • Applicable between 40 MHz and 6 GHz.
  • Integrated temperature stabilized bias for easy design.
  • Bias current configurable with external resistor.
  • Noise figure NF = 0.80 dB at 1.575 GHz.
  • Insertion power gain = 18.3 dB at 1.575 GHz.
  • 110 GHz transit frequency - SiGe:C technology.
  • Power-down mode current consumption < 1 μA.
  • Optimized performance at low 5 mA supply current.
  • ESD.

More Datasheets from NXP Semiconductors

Part Number Description
BGU7041 1 GHz wideband low-noise amplifier
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BGU7044 1 GHz wideband low-noise amplifier
BGU7045 1 GHz wideband low-noise amplifier
BGU7051 SiGe:C Low Noise High Linearity Amplifier
BGU7052 SiGe:C Low Noise High Linearity Amplifier
BGU7053 SiGe:C Low Noise High Linearity Amplifier
BGU7060 Analog high linearity low noise variable gain amplifier
BGU7061 Analog high linearity low noise variable gain amplifier
BGU7062 Analog high linearity low noise variable gain amplifier

BGU7003 Distributor