BGY2016 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D167 BGY2016 UHF amplifier module Product specification Supersedes data of 1999 Nov 24 2000 Jan 04 Philips Semiconductors Product specification UHF amplifier module Features - 26 V nominal supply voltage - 16 W output power into a load of 50 Ω with an RF drive power of ≤20 m W. APPLICATIONS - Base station transmitting equipment operating in the 1805 to 1990 MHz frequency band. DESCRIPTION The BGY2016 is a three-stage UHF amplifier module in a SOT365A package with a plastic cap. It consists of three NPN silicon planar transistor dies mounted together with matching and bias circuit ponents on a metallized ceramic Al N substrate. handbook, halfpage PINNING - SOT365A PIN 1 2 3 4 Flange RF input VS1 VS2 RF output ground DESCRIPTION MSA447 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Tmb = 25 °C. MODE OF OPERATION CW f (MHz) 1805 to 1990 VS1 (V) 5 VS2 (V) 26 PL (W) ≥16 Gp (d B) ≥28 η (%) ≥30 ZS; ZL (Ω) 50 LIMITING VALUES In accordance with the...