BGY212A Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D373 BGY212A UHF amplifier module Preliminary specification 1999 Aug 23 Philips Semiconductors Preliminary specification UHF amplifier module Features - 3.5 V nominal supply voltage - 2 W output power - Easy output power control by DC voltage. APPLICATIONS - Digital cellular radio systems with Time Division Multiple Access (TDMA) operation (GSM systems) in the 1710 to 1785 MHz frequency range. DESCRIPTION book, halfpage PINNING - SOT482C PIN 1 2 3 4 5 VC VS RF output ground DESCRIPTION RF input The BGY212A is a three-stage UHF amplifier module in a SOT482C leadless package with a plastic cover. The module consists of one NPN silicon planar transistor die and one bipolar monolithic integrated circuit mounted together with matching and bias circuit ponents on a metallized ceramic substrate. MBK201 Bottom view Fig.1 Simplified outline QUICK REFERENCE DATA RF performance at Tmb = 25 °C. MODE OF OPERATION Pulsed; δ = 1 : 8 f (MHz) 1710 to 1785 VS (V) 3.5 VC (V) ≤2.2 PL (d Bm) typ. 33 Gp (d B) typ. 33 η (%) typ. 40 ZS , ZL (Ω ) 50 LIMITING VALUES In accordance with the...