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BLA1011-10 - Avionics LDMOS transistor

General Description

Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap.

The common source is connected to the flange.

Key Features

  • High power gain.
  • Easy power control.
  • Excellent ruggedness.
  • Source on mounting base eliminates DC isolators, reducing common mode inductance.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLA1011-10 Avionics LDMOS transistor Product specification Supersedes data of 2002 Oct 02 2003 Nov 19 Philips Semiconductors Product specification Avionics LDMOS transistor FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on mounting base eliminates DC isolators, reducing common mode inductance. APPLICATIONS • Avionics transmitter applications in the 1030 to 1090 MHz frequency range. DESCRIPTION 2 1 BLA1011-10 PINNING - SOT467C PIN 1 2 3 drain gate source, connected to flange DESCRIPTION 3 Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the flange. Top view MBK584 Fig.