BLA1011-2 Description
Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flangeless package (SOT538A) with a ceramic cap. The mon source is connected to the mounting base. QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon source test circuit.
BLA1011-2 Key Features
- High power gain
- Easy power control
- Excellent ruggedness
- Source on mounting base eliminates DC isolators, reducing mon mode inductance