Datasheet4U Logo Datasheet4U.com

BLA1011-2 - Avionics LDMOS transistor

General Description

Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flangeless package (SOT538A) with a ceramic cap.

The common source is connected to the mounting base.

Key Features

  • High power gain.
  • Easy power control.
  • Excellent ruggedness.
  • Source on mounting base eliminates DC isolators, reducing common mode inductance.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BLA10 3mm LED STAND-OFF BEDFORD OPTO TECHNOLOGY
BLA1117-1.5 800mA Low-Dropout Linear Regulator GME
BLA1117-1.8 800mA Low-Dropout Linear Regulator GME
BLA1117-2.5 800mA Low-Dropout Linear Regulator GME
BLA1117-2.85 800mA Low-Dropout Linear Regulator GME

Other Datasheets by NXP Semiconductors

Part Number Description
BLA1011-200 Avionics LDMOS transistor
BLA1011-10 Avionics LDMOS transistor
BLA1011-300 Avionics LDMOS transistors
BLA1011S-200 Avionics LDMOS transistor
BLA0912-250 Avionics LDMOS transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DISCRETE SEMICONDUCTORS DATA SHEET M3D438 BLA1011-2 Avionics LDMOS transistor Product specification Supersedes data of 2002 Oct 02 2003 Nov 19 Philips Semiconductors Product specification Avionics LDMOS transistor FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on mounting base eliminates DC isolators, reducing common mode inductance. APPLICATIONS • Avionics applications in the 1030 to 1090 MHz frequency range. DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flangeless package (SOT538A) with a ceramic cap. The common source is connected to the mounting base. 2 Top view BLA1011-2 PINNING - SOT538A PIN 1 2 3 drain gate source, connected to mounting base DESCRIPTION 1 3 MBK905 Fig.