BLF10M6LS135
description
135 W LDMOS power transistor for industrial applications at frequencies from 700 MHz to 1000 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit.
Test signal f
PL(AV)
Gp
D
(MHz)
(V) (W)
(d B) (%)
2-carrier W-CDMA
869 to 894
28 26.5
21.0 28.0
ACPR (d Bc)
- 39[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 d B at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz.
1.2 Features and benefits
- Easy power control
- Integrated ESD protection
- Enhanced ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (700 MHz to 1000 MHz)
- Internally matched for ease of use
- pliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(Ro HS)
1.3 Applications
- RF power amplifiers for ISM applications in the 700 MHz to 1000 MHz frequency range
NXP Semiconductors
BLF10M6135; BLF10M6LS135
Power LDMOS transistor
2. Pinning...
