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BLF10M6LS135 - Power LDMOS transistor

This page provides the datasheet information for the BLF10M6LS135, a member of the BLF10M6135 Power LDMOS transistor family.

Datasheet Summary

Description

135 W LDMOS power transistor for industrial applications at frequencies from 700 MHz to 1000 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit.

Features

  • Easy power control.
  • Integrated ESD protection.
  • Enhanced ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (700 MHz to 1000 MHz).
  • Internally matched for ease of use.
  • Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) 1.3.

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Datasheet Details

Part number BLF10M6LS135
Manufacturer NXP
File Size 138.44 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF10M6LS135 Datasheet
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Full PDF Text Transcription

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BLF10M6135; BLF10M6LS135 Power LDMOS transistor Rev. 1 — 24 June 2014 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for industrial applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Test signal f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) 2-carrier W-CDMA 869 to 894 28 26.5 21.0 28.0 ACPR (dBc) 39[1] [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. 1.
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