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BLF2043 - UHF power LDMOS transistor

General Description

1 APPLICATIONS

Communication transmitter applications in the UHF frequency range.

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flangeless package (SOT538A) with a ceramic cap.

The common source is connected to the mounting base.

Key Features

  • High power gain.
  • Easy power control.
  • Excellent ruggedness.
  • Source on mounting base eliminates DC isolators, reducing common mode inductance.
  • Designed for broadband operation (HF to 2.2 GHz). handbook, halfpage BLF2043.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D438 BLF2043 UHF power LDMOS transistor Objective specification Supersedes data of 2000 Feb 17 2000 Feb 23 Philips Semiconductors Objective specification UHF power LDMOS transistor FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on mounting base eliminates DC isolators, reducing common mode inductance • Designed for broadband operation (HF to 2.2 GHz). handbook, halfpage BLF2043 PINNING - SOT538A PIN 1 2 3 drain gate source DESCRIPTION 1 APPLICATIONS • Communication transmitter applications in the UHF frequency range. DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flangeless package (SOT538A) with a ceramic cap.