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BLF2043F - UHF power LDMOS transistor

General Description

1 drain 2 gate 3 source, connected to flange APPLICATIONS

Communication transmitter applications in the UHF frequency range.

Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap.

Key Features

  • High power gain.
  • Easy power control.
  • Excellent ruggedness.
  • Source on mounting base eliminates DC isolators, reducing common mode inductance.
  • Designed for broadband operation (HF to 2.2 GHz).

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DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF2043F UHF power LDMOS transistor Product specification Supersedes data of 2000 Oct 19 2002 Mar 05 Philips Semiconductors UHF power LDMOS transistor Product specification BLF2043F FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on mounting base eliminates DC isolators, reducing common mode inductance • Designed for broadband operation (HF to 2.2 GHz). PINNING - SOT467C PIN DESCRIPTION 1 drain 2 gate 3 source, connected to flange APPLICATIONS • Communication transmitter applications in the UHF frequency range. DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange.