BLF245 - VHF power MOS transistor

NXP Semiconductors

General Description

Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range.

The transistor is encapsulated in a 4-lead SOT123 flange envelope, with a ceramic cap.

All leads are isolated from the flange.

Key Features

High power gain.
Low noise figure.
Easy power control.
Good thermal stability.
Withstands full load mismatch. g MBB072 BLF245 PIN.

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BLF245 vhf power mos transistor by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	BLF245
Manufacturer	NXP Semiconductors
File Size	91.60 KB
Description	VHF power MOS transistor
Datasheet	BLF245 Datasheet

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DISCRETE SEMICONDUCTORS DATA SHEET BLF245 VHF power MOS transistor Product speciﬁcation September 1992 Philips Semiconductors Product speciﬁcation VHF power MOS transistor FEATURES • High power gain • Low noise figure • Easy power control • Good thermal stability • Withstands full load mismatch. g MBB072 BLF245 PIN CONFIGURATION lfpage 1 4 d s DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage (VGS) groups are available on request. PINNING - SOT123 PIN 1 2 3 4 drain source gate source DESCRIPTION 2 3 MSB057 Fig.