BLF245 Description
Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange.
BLF245 Key Features
- High power gain
- Low noise figure
- Easy power control
- Good thermal stability
- Withstands full load mismatch