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BLF245
RF POWER MOSFET
N-Channel Enhancement Mode
DESCRIPTION:
The ASI BLF245 is a vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range.
FEATURES INCLUDE:
• PG = 13 dB Typical at 175 MHz • 30:1 Load VSWR Capability • Omnigold™ metalization system
PACKAGE STYLE .380 4L FLG
MAXIMUM RATINGS
ID 6.0 A
VDS 65 V
VGS ±20 V
PDISS
68 W @ TC = 25 °C
TJ -65 °C to +150 °C
TSTG
-65 °C to +200 °C
θJC 1.8 °C/W
1 = DRAIN 2 = GATE 3&4 = SOURCE
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BVDSS
ID = 10 mA
IDSS
VDS = 28 V
VGS = 0 V
IGSS VDS = 0 V VGS = ±20 V
VGS(th)
VDS = 10 V
ID = 10 mA
gfs
VDS = 10 V
ID = 1.5 A
Ciss
Coss Crss
VDS = 28 V
VGS = 0 V
f = 1.
BLF245 Datasheet
