BLF245B Description
Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead, SOT279 balanced flange envelope, with a ceramic cap. The mounting flange provides the mon source connection for the transistors.
BLF245B Key Features
- High power gain
- Easy power control
- Good thermal stability
- Gold metallization ensures excellent reliability. DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical