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BLF245B - VHF push-pull power MOS transistor

General Description

Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range.

The transistor is encapsulated in a 4-lead, SOT279 balanced flange envelope, with a ceramic cap.

Key Features

  • High power gain.
  • Easy power control.
  • Good thermal stability.
  • Gold metallization ensures excellent reliability.

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DISCRETE SEMICONDUCTORS DATA SHEET BLF245B VHF push-pull power MOS transistor Product specification September 1992 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability. DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead, SOT279 balanced flange envelope, with a ceramic cap. The mounting flange provides the common source connection for the transistors.