BLF245B Datasheet | NXP Semiconductors

FEATURES - High power gain - Easy power control - Good thermal stability - Gold metallization ensures excellent reliability. DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead, SOT279 balanced flange envelope, with a ceramic cap. The mounting flange provides the mon source connection for the transistors. PINNING - SOT279 PIN 1 2 3 4 5 DESCRIPTION gate 1 drain 1 gate 2 drain 2 source Top view fpage PIN CONFIGURATION 4 g2 d2 s d1 MSB018 MBB157 5 2 3 g1 Fig.1 Simplified outline and symbol. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the Be O disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Th = 25 °C in a push-pull mon source test circuit. MODE OF OPERATION CW, class-B f (MHz) 175 VDS (V) 28 PL (W) 30 GP (d B) > 14 ηD (%) > 55 September 1992 Philips Semiconductors Product specification VHF push-pull power MOS transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). Per transistor section unless otherwise specified. SYMBOL VDS ±VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage DC drain current total power dissipation storage temperature junction temperature CONDITIONS - - - up to Tmb = 25 °C; total device; - both sections equally loaded - 65 - MIN. MAX. 65 20 4.5 75 150 200 UNIT...