BLF547 Description
Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for munications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT262A2 balanced flange envelope, with two ceramic caps. The mounting flange provides the mon source connection for the transistors.
BLF547 Key Features
- High power gain
- Easy power control
- Good thermal stability
- Gold metallization ensures excellent reliability
- Designed for broadband operation. DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transisto