FEATURES AND BENEFITS
Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 900 mA: Average output power = 300 W Power gain = 27.2 dB Efficiency = 70 % Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (HF and VHF band) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 APPLICATIONS
Industrial, scientific and medical applications Broadcast transmitter applications NXP Semiconductors BLF573; BLF573S HF / VHF power LDMOS transistor 2. Pinning information Table 2. Pinning Pin DESCRIPTION
BLF573 (SOT502A) 1 drain 2 gate 3 source BLF573S (SOT502B) 1 drain 2 gate 3 source [1] Connected to flange. 3. Ordering information Simplified outline Graphic symbol 11 3 [1] 22 3 sym112 11 3 [1] 22 3 sym112 Table 3. Ordering information Type number Package Name DESCRIPTION
Version BLF573 - flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A BLF573S - earless flanged LDMOST ceramic package, 2 leads SOT502B 4.
NXP Semiconductors
