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BLF574XR - Power LDMOS transistor

General Description

A 600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band.

Key Features

  • Easy power control.
  • Integrated ESD protection.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (HF to 500 MHz).
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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📁 Similar Datasheet

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Other Datasheets by NXP Semiconductors

Part Number Description
BLF574XRS Power LDMOS transistor
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BLF578XRS Power LDMOS transistor
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BLF522 UHF power MOS transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BLF574XR; BLF574XRS Power LDMOS transistor Rev. 1 — 20 June 2013 Product data sheet 1. Product profile 1.1 General description A 600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF574 using NXP's XR process to provide maximum ruggedness capability in the most severe applications without compromising the RF performance. Table 1. Application information Test signal f (MHz) CW 225 pulsed RF 225 VDS PL Gp (V) (W) (dB) 50 600 23.5 50 600 24 D (%) 74.5 74.7 1.