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BLF7G27LS-140 - Power LDMOS transistor

Download the BLF7G27LS-140 datasheet PDF. This datasheet also covers the BLF7G27L-140 variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

140 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

Key Features

  • Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for low memory effects providing excellent digital pre-distortion capability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLF7G27L-140_PhilipsSemiconductors.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
BLF7G27LS-140 Power LDMOS transistor Ampleon
BLF7G27LS-100 Power LDMOS transistor Ampleon
BLF7G27L-100 Power LDMOS transistor Ampleon
BLF7G27L-140 Power LDMOS transistor Ampleon
BLF7G20L-200 Power LDMOS transistor Ampleon

Other Datasheets by NXP Semiconductors

Part Number Description
BLF7G27L-140 Power LDMOS transistor
BLF7G20L-160P Power LDMOS transistor
BLF7G20L-200 Power LDMOS transistor
BLF7G20LS-160P Power LDMOS transistor
BLF7G20LS-200 Power LDMOS transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com BLF7G27L-140; BLF7G27LS-140 Power LDMOS transistor Rev. 01 — 27 May 2010 Objective data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation IS-95 [1] f (MHz) 2500 to 2700 IDq (mA) 1300 VDS (V) 28 PL(AV) (W) 20 Gp (dB) 17.0 ηD (%) 22 ACPR885k (dBc) −45[1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz. 1.