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BLP8G10S-45P Datasheet Power LDMOS transistor

Manufacturer: NXP Semiconductors

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General Description

The BLP8G10S-45P and BLP8G10S-45PG are dual path, 45 W LDMOS power transistors for base station applications at frequencies from 700 MHz to 1000 MHz.

Table 1.

Application performance Typical RF performance at Tcase = 25 C;

Overview

BLP8G10S-45P; BLP8G10S-45PG Power LDMOS transistor Rev.

1 — 25 July 2013 Product data sheet 1.

Product profile 1.

Key Features

  • High efficiency.
  • Excellent ruggedness.
  • Designed for broadband operation (700 MHz to 1000 MHz).
  • Excellent thermal stability.
  • High power gain.
  • Integrated ESD protection.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

📁 Similar Datasheet

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Ampleon Logo BLP8G10S-45P Power LDMOS transistor Ampleon
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