BLP8G10S-45P Overview
The BLP8G10S-45P and BLP8G10S-45PG are dual path, 45 W LDMOS power transistors for base station applications at frequencies from 700 MHz to 1000 MHz. Application performance Typical RF performance at Tcase = 25 C; IDq = 224 mA in mon source class-AB production circuit.
BLP8G10S-45P Key Features
- High efficiency
- Excellent ruggedness
- Designed for broadband operation (700 MHz to 1000 MHz)
- Excellent thermal stability
- High power gain
- Integrated ESD protection
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
