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BLP8G10S-45PG - Power LDMOS transistor

This page provides the datasheet information for the BLP8G10S-45PG, a member of the BLP8G10S-45P Power LDMOS transistor family.

Datasheet Summary

Description

The BLP8G10S-45P and BLP8G10S-45PG are dual path, 45 W LDMOS power transistors for base station applications at frequencies from 700 MHz to 1000 MHz.

Table 1.

Application performance Typical RF performance at Tcase = 25 C; IDq = 224 mA in common source class-AB production circuit.

Features

  • High efficiency.
  • Excellent ruggedness.
  • Designed for broadband operation (700 MHz to 1000 MHz).
  • Excellent thermal stability.
  • High power gain.
  • Integrated ESD protection.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Datasheet preview – BLP8G10S-45PG

Datasheet Details

Part number BLP8G10S-45PG
Manufacturer NXP
File Size 194.37 KB
Description Power LDMOS transistor
Datasheet download datasheet BLP8G10S-45PG Datasheet
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Full PDF Text Transcription

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BLP8G10S-45P; BLP8G10S-45PG Power LDMOS transistor Rev. 1 — 25 July 2013 Product data sheet 1. Product profile 1.1 General description The BLP8G10S-45P and BLP8G10S-45PG are dual path, 45 W LDMOS power transistors for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Application performance Typical RF performance at Tcase = 25 C; IDq = 224 mA in common source class-AB production circuit. Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 960 28 2.5 20.8 19.8 49 [1] [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01% probability on CCDF; carrier spacing = 5 MHz; per section unless otherwise specified. 1.
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