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BLP8G27-10 Datasheet Power LDMOS transistor

Manufacturer: NXP Semiconductors

General Description

10 W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz.

Table 1.

Application performance (multiple frequencies) Typical RF performance at Tcase = 25 C;

Overview

BLP8G27-10 Power LDMOS transistor Rev.

1 — 24 August 2015 Product data sheet 1.

Product profile 1.

Key Features

  • High efficiency.
  • Excellent ruggedness.
  • Designed for broadband operation.
  • Excellent thermal stability.
  • High power gain.
  • Integrated ESD protection.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.