BLP8G27-10 Datasheet (PDF) Download
NXP Semiconductors
BLP8G27-10

Description

W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz.

Key Features

  • High efficiency
  • Excellent ruggedness
  • Designed for broadband operation
  • Excellent thermal stability
  • High power gain
  • Integrated ESD protection
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)