NXP Semiconductors BLV33F
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.| Part No. | BLV33F |
|---|---|
| Datasheet | BLV33F Download |
| Manufacturer |  NXP Semiconductors |
| Description | VHF linear power transistor |
| Buy | Stock & Price |
FEATURES
● Internally matched input for wideband operation and high power gain● Diffused emitter ballasting resistors for an optimum temperature profile
● Gold metallization ensures excellent reliability.
APPLICATIONS
● Primarily intended for use in linear VHF amplifiers for television transmitters and transposers.DESCRIPTION
NPN silicon planar epitaxial transistor encapsulated in a 1⁄ ” 6 lead SOT119A capstan package with ceramic cap. 2 All leads are isolated from the flange. 1 2 BLV33F PINNING - SOT119A PIN 1 2 3 4 5 6 SYMBOL e e b c e e emitter emitter base collector emitter emitterDESCRIPTION
handbook, halfpage c b e 3 4 5 6 MAM269 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance in a common emitter push-pull test circuit. MODE OF OPERATION CW, class-A CW, class-AB Notes 1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to peak sync level. 2. Television service (negative modulation, C.C.I.R. system).
