BLV33F Description
NPN silicon planar epitaxial transistor encapsulated in a 1⁄ ” 6 lead SOT119A capstan package with ceramic cap. 2 All leads are isolated from the flange. QUICK REFERENCE DATA RF performance in a mon emitter push-pull test circuit.
BLV33F Key Features
- Internally matched input for wideband operation and high power gain
- Diffused emitter ballasting resistors for an optimum temperature profile
- Gold metallization ensures excellent reliability