BLV33 Description
collector 2 c 1 b DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 1⁄ " 4 fslead SOT147 capstan package with ceramic cap. 16 All leads are isolated from the stud. 3 e 4 Top view MAM270 Fig.1 Simplified outline and symbol.
BLV33 Key Features
- Diffused emitter ballasting resistors for an optimum temperature profile
- Gold sandwich metallization ensures excellent reliability
BLV33 Applications
- Primarily intended for use in linear VHF amplifiers for television transmitters and transposers