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BLV857 - UHF linear push-pull power transistor

General Description

NPN silicon planar transistor with two sections in push-pull configuration.

The device is encapsulated in a SOT324B 4-lead rectangular flange package with a ceramic cap.

The common emitters are connected to the flange.

Key Features

  • Internal input matching for an optimum wideband capability and high gain.
  • Polysilicon emitter ballasting resistors for an optimum temperature profile.
  • Gold metallization ensures excellent reliability.

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DISCRETE SEMICONDUCTORS DATA SHEET BLV857 UHF linear push-pull power transistor Product specification Supersedes data of 1995 Oct 04 1997 Jan 16 Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES • Internal input matching for an optimum wideband capability and high gain • Polysilicon emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. APPLICATION • Common emitter class-A operation in linear transposers/transmitters (television) in the 470 to 860 MHz frequency band. DESCRIPTION NPN silicon planar transistor with two sections in push-pull configuration. The device is encapsulated in a SOT324B 4-lead rectangular flange package with a ceramic cap.