BLV857 Description
NPN silicon planar transistor with two sections in push-pull configuration. The device is encapsulated in a SOT324B 4-lead rectangular flange package with a ceramic cap. The mon emitters are connected to the flange.
BLV857 Key Features
- Internal input matching for an optimum wideband capability and high gain
- Polysilicon emitter ballasting resistors for an optimum temperature profile
- Gold metallization ensures excellent reliability. APPLICATION
- mon emitter class-A operation in linear transposers/transmitters (television) in the 470 to 860 MHz frequency band. DESC
- toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not